Research Progress of Gallium Nitride Microdisk Cavity Laser

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the...

Laser Micromachining for Gallium Nitride Based Light-Emitting Diodes

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

GaN-based materials are well-recognized for their exceptional optical qualities, particularly in the blue and UV parts of the spectrum. In addition, their wide bandgaps allow efficient operation at room temperature and higher. This work will describe the room-temperature performance of optically-pumped GaN photonic crystal (PC) nanobeam lasers, with thresholds as low as 9.1 μJ/cm2, the lowest r...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition

Ž . Ž . The growth of cubic aluminum nitride AlN and cubic gallium nitride GaN is studied. The effects of ambient pressure and substrate temperature on the structure of the AlN and GaN films are systematically investigated. It is shown that the films are amorphous when the temperature and the pressure are too low. Cubic AlN is obtained at a temperature of 8008C and a pressure of 0.2 Torr. Cubic...